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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3063
DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For TV video output amplification
PINNING PIN 1 2 3 see Fig.2(c) DESCRIPTION Emitter Collector Base
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg
Collector-base voltage

PARAMETER
CHA IN
Collector current
Collector-emitter voltage
Emitter-base voltage
ES NG
Open emitter
Open base
MIC E
CONDITIONS
OND
TOR UC
VALUE 300 300 7 0.1 0.2 1.2 150 -55~150
UNIT V V V A A W ae ae
Open collector
Collector current-peak Collector power dissipation Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=3m A IC=30mA ; VCE=10V IC=10|I IC=100|I IE=10|I A;IE=0 A; IB=0 A; IC=0 300 300 7 50 2.4 70 MIN
2SC3063
SYMBOL VCEsat VBE V(BR)CBO V(BR)CEO V(BR)EBO hFE COB fT
TYP.
MAX 1.5 1.2
UNIT V V V V V
IC=5mA ; VCE=50V IE=0; VCB=30V;f=1MHz IE=-20mA ; VCB=30V
250 pF MHz

CHA IN
E SEM NG
OND IC
TOR UC
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3063

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3063

CHA IN
E SEM NG
OND IC
TOR UC
4


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